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罗毅
中国工程院院士，清华大学电子工程系教授、博士生导师
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详细介绍
罗毅
中国工程院院士，清华大学电子工程系教授、博士生导师
个人履历：
罗毅：男，1960年2月出生，四川资阳人，半导体光电子技术专家，中国工程院院士，清华大学电子工程系教授、博士生导师，北京信息科学与技术国家研究中心副主任，教育部“长江特聘教授”，国家杰出青年科学基金获得者。 1983年获得清华大学学士学位；1987年获得日本东京大学硕士学位；1990年获得日本东京大学博士学位；1990年4月-1992年3月任日本光计测技术开发株式会社中央研究所研究员；1992年4月-1992年12月任清华大学电子工程系讲师；1992年12月起任清华大学电子工程系教授；1997年-2012年任集成光电子学国家重点联合实验室主任；2021年当选为中国工程院院士。罗毅院士主要研究化合物半导体光电子器件及其集成应用技术，包括激光器、LED、光调制器、光探测器，及其在光纤通信、宽带信息感知、半导体照明等领域的应用，在支撑半导体照明、宽带光纤网络的光电子器件和工程化核心技术领域做出了突出贡献。主持973项目3项；已获得授权发明专利34项；发表学术论文367篇；获国家技术发明二等奖2 项（均排名1），国家科技进步二等奖1项（排名2），省部级奖3 项（均排名1）。
论文代表：
Two-step design method for highly compact three-dimensional freeform optical system for LED surface light source, Optics Express, 22(106) (2014), A1491-A1506.
Fabrication of sub-200 nm AlN-GaN-AlN waveguide with cleaved end facet, Journal of Vacuum Science & Technology B, 32(4) (2014), 041207.
MBE-grown AlN-on-Si with improved crystalline quality by using silicon-on-insulator substrates, Applied Physics Express, 7(6) (2014), 065505.
Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography, Journal of Applied Physics, 115(12) (2014), 123101.
Nonlinear dynamics in integrated coupled DFB lasers with ultra-short delay, Optics express, 22(5) (2014), 5614-5622.
A two-step design method for high compact rotationally symmetric optical system for LED surface light source, Optics Express, 22(102) (2014), A233-A247.
Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography, Chinese Physics B, 23(2) (2014), 028504.
InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength, Applied Physics Express, 7(2) (2014), 025203.
Phosphor-free nanopyramid white light-emitting diodes grown on {10 1ˉ 1} planes using nanospherical-lens photolithography, Applied Physics Letters, 103(24) (2013), 241107.
Low drive voltage optical phase modulator with novel InGaAlAs/ InAlAs multiple-quantum-barrier based n-i-n heterostructure, Optics express, 21(21) (2013), 24894-24903.
Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography, Aip Advances, 3(9)(2013), 092124.
Overlapping-based optical freeform surface construction for extended lighting source, Optics express, 21(17) (2013), 19750-19761.
Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method, Japanese Journal of Applied Physics, 52(8S) (2013), 08JG13.
Atomically smooth and homogeneously N-polar AlN film grown on silicon by alumination of Si3N4, Applied Physics Letters, 102(14) (2013), 141913.
Wavelength Dependence of Colorimetric Properties of Lighting Sources Based on Multi-Color LEDs, Optics Express, 21(3)(2013), 3775-3783.
Suppression of Chaos in Integrated Twin DFB Lasers for Millimeter-Wave Generation, Optics Express, 21(2)(2013), 2444-2451.
Back-to-Back UTC-PDs With High Responsivity, High Saturation Current and Wide Bandwidth, IEEE Photonics Technology Letters, 25(2)(2013), 136-139.
A Fast Feedback Method to Design Easy-Molding Freeform Optical System with Uniform Illuminance and High Light Control Efficiency, Optics Express, 21(1)(2013), 1258-1269.
Modeling and experimental study on sensing response of an AlGaN/GaN HEMT-based hydrogen sensor, Sensors and Actuators B: Chemical, 176(2013), 241-247.
InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers, Nanoscale research letters, 7(1) (2012), 1-8.
Research on scattering properties of phosphor for high power white light emitting diode based on Mie scattering theory, Acta Physica Sinica, 61(20) (2012), 204201.
A GaN p-i-p-i-n Ultraviolet Avalanche Photodiode, Chinese Physics Letters, 29(9)(2012), 097804.
讲座主题：
《光电子器件与人工智能》
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